AM2330N analog power preliminary publication order number: ds-am2330_c 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m( ) i d (a) 32 @ v gs = 10v 5.2 64 @ v gs = 4.5v 3.7 product summary 30 n-channel 30-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol limit units v ds 30 v gs 20 t a =25 o c 5.2 t a =70 o c 4.1 i dm 30 i s 1.6 a t a =25 o c 1.3 t a =70 o c 0.8 t j , t stg -55 to 150 o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w d s g symbol maximum units t <= 5 sec 100 o c/w steady-state 166 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja
AM2330N analog power preliminary publication order number: ds-am2330_c 2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situ ation where personal injury or death may occur. should buyer purchase or use apl products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 v ds = 24 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 5.2 a 32 v gs = 4.5 v, i d = 3.7 a 64 forward tranconductance a g fs v ds = 15 v, i d = 5.2 a 40 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.7 v total gate charge q g 4.0 gate-source charge q gs 1.1 gate-drain charge q gd 1.4 turn-on delay time t d(on) 16 rise time t r 5 turn-off delay time t d(off) 23 fall-time t f 3 v dd = 25 v, r l = 25 , i d = 1 a, v gen = 10 v ns drain-source on-resistance a r ds(on) m parame ter limits unit v ds = 15 v, v gs = 4.5 v, i d = 5.2 a nc dynamic b ua i dss zero gate voltage drain current static test conditions symbol
AM2330N analog power preliminary publication order number: ds-am2330_c 3 typical electrical characteristics (n-channel) figure 3. on-resistance variation with temperature figure 5. transfer characteristics figure 2. on-resistance with drain current figure 4. on-resistance variation with gate to source voltage figure 6. body diode forward voltage variation with source current and temperature figure 1. on-region characteristics 0 .6 0 .8 1.0 1.2 1.4 1.6 -50 -2 5 0 2 5 50 75 10 0 12 5 150 t j juncation t emperature (c) normalized r ds (on) v gs = 10v i d = 10a 0 10 20 30 40 50 60 0 1 2 3 4 5 6 v gs gate to s o urc e vo ltage (v) i d drain current (a) 25c 125c -55c v d =5v 0 10 20 30 40 50 0 0.5 1 1.5 2 vds, drain-source voltage (v) id, drain current (a) 3.0v 6.0v 4.0v v gs = 10v 0.5 0.8 1.1 1.4 1.7 2 0 10 20 30 40 50 id, drain current (a) rds(on), normalized drain-source on-resistance 4.5v 10v 6.0v 0 0.01 0.02 0.03 0.04 0.05 2 4 6 8 10 vgs, gate to source voltage (v) r ds(o n), on-resistan ce (o hm) i d = 10a t a = 25 o c 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 vsd, body diode forward voltage (v) is, reverse drain current (a) t a = 125 o c 25 o c v gs = 0v
AM2330N analog power preliminary publication order number: ds-am2330_c 4 typical electrical characteristics (n-channel) figure 11. transient thermal response curve figure 8. capacitance characteristics figure 10. single pulse maximum power dissipation normalized thermal transient junction to ambient square wave pulse duration (s) figure 9. threshold vs ambient temperature 0 400 800 1200 1600 0 5 10 15 20 25 30 vds, drain to source voltage (v) capacitance (pf) ciss crss coss f = 1mhz v gs = 0 v 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125c/w ta = 25c 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 ta, ambient temperature ( o c) vth, gate-source thresthold voltage (v) v ds = v gs i d = 250ma 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r qja (t) = r(t) * r qja r qja = 125 c/w t j - t a = p * r qja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 0 2 4 6 8 10 0 2 4 6 8 10 qg, charge (nc) vgs gate-source voltage ( v ) i d =6.9a figure 7. gate charge characteristics
AM2330N analog power preliminary publication order number: ds-am2330_c 5 package information
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